YBCO/ND-Y_2O_3/YBCO超导薄膜的制备及其特性研究  

Study on the Preparation and Properties of YBCO/ND-Y_2O_3/YBCO Superconducting Thin Films

作　　者：汪薪生 郭峰[1] 任泽龙[1] 李国兴[1] 张宝林[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,长春130012

出　　处：《人工晶体学报》2015年第7期1731-1735,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51002063);长春市科技局国际科技合作计划(12ZX68)

摘　　要：采用光辅助金属有机物化学气相沉积技术,在La Al O3(100)单晶衬底上外延制备约500 nm厚YBCO/NDY2O3/YBCO薄膜。用X射线衍射技术分析薄膜的物相结构和外延特性,通过扫描电子显微镜观察薄膜的表面与截面形貌。主要研究了不同生长时间的Y2O3纳米点对YBCO超导薄膜性能的影响。Y2O3纳米点生长时间为20 s样品的临界电流密度达到2.4 MA/cm2(77 K,0 T),与未生长Y2O3纳米点的YBCO薄膜相比,其临界电流密度提高20%。分析表明,薄膜中的Y2O3在YBCO薄膜内部起到了有效钉扎中心作用,提高了临界电流密度。About 500 nm thick YBCO/ND-Y203/YBCO sandwich structure on LaAIO3 （100） substrate were grown successfully by photo-assisted MOCVD to investigate the possible improvement of self-field critical current density （Jo）. The phase structure and in-plane alignment was characterized by X-ray diffraction. The surface and cross-sectional morphology were evaluated by SEM. The effect of various growth time of ND-Y203 on the properties of YBCO thin films was investigated. Self-field critical current density determined by AC magnetic induction method shows that sample with 20 s growth ND-Y203 has the higher Jc of 2.4 MA/cm^2, which is 20% improved comparing with the samples without ND-Y203. The pinning effect caused by Y203 nanodots are considered to analyze the results about the Jc improvement and decline.

关 键 词：YBCO Y2O3纳米点 磁通钉扎 MOCVD 

分 类 号：O511.3[一般工业技术—材料科学与工程]