二维声子晶体线缺陷聚声效应研究  

Investigation on the Sound Energy Localization in Two-Dimensional Phononic Crystals with a Line Defect

作　　者：徐驰[1] 郭辉[1] 陈敏[1] 王岩松[1] 刘宁宁[1] 

机构地区：[1]上海工程技术大学汽车工程学院,上海201620

出　　处：《人工晶体学报》2015年第7期1929-1935,共7页Journal of Synthetic Crystals

基　　金：上海市自然科学基金(14ZR1418600);国家自然科学基金(51175320);上海市教委科研创新项目(13YZ110)

摘　　要：基于数值方法研究了含线缺陷的二维声子晶体的聚声效应。利用结合超元胞技术的平面波展开法及有限元方法,分别对线缺陷二维声子晶体的能带结构及其内部声场分布规律进行了计算分析;以线缺陷轴线上声压梯度放大倍数表征聚声效果,分析了声子晶体结构参数对该放大倍数的影响规律。结果表明,填充率大、结构规模适当的二维线缺陷声子晶体具有更好的聚声效果;线缺陷的理想位置应在声子晶体的几何轴线上。此结果可为高效声能量回收器件的设计提供理论支持。The characteristics of the sound energy localization in two-dimensional phononic crystals （PCs） with a line defect were studied numerically. Band structures and the pressure distributions in the PCs were calculated by plane wave expansion method in combination with the supercell technique and the finite element method （FEM）, respectively. The sound localization effect was characterized by amplification factor of the sound pressure gradient （AsI,G ） in the middle of the line defect; the influences of the structural parameters of the PC on AspG are further studied. The results show that good sound localization effect can be achieved with a relatively big filling fraction of the inclusion as well as a reasonable size of the whole structure ; the optimal place of the line defect is located along the central axis of the PC. The obtained results may be provided as a theoretical guidance for the design of high-efficiency sound energy harvesting devices.

关 键 词：声子晶体 声能回收 线缺陷 聚声效应 

分 类 号：O735[理学—晶体学]