一种奇异形状纳磁体逻辑器件的转换特性  

Study of the switching behavior of a peculiar shape nanomagnet logic device

作　　者：杨晓阔[1,2] 蔡理[1] 耿道田[1] 康强[3] 肖明清[2] 

机构地区：[1]空军工程大学理学院,陕西西安710051 [2]空军工程大学航空航天工程学院,陕西西安710038 [3]空军工程大学科研部,陕西西安710051

出　　处：《西安电子科技大学学报》2015年第4期171-175,共5页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61302022;61172043);陕西省自然科学基础研究计划资助项目(2013JQ8010);中国博士后科学基金资助项目(2014M562561)

摘　　要：研究了出现单个角缺失形状缺陷的纳磁体逻辑器件的转换特性.采用磁学计算软件对该类奇异形状纳磁体逻辑器件在角缺失幅度、纳磁体厚度和磁性材料变化下的首选磁化特性进行了仿真,发现不同材料制备的角缺失型纳磁体逻辑器件其首选逻辑态出现在邻近的临界角缺失幅度上,坡莫合金纳磁体极易受角缺失形状缺陷的影响,镀膜厚度的增加和高饱和磁化材料阻碍了器件首选逻辑态的出现.这些结果为如何控制并应用奇异形状纳磁体逻辑器件的首选磁化特性提供了重要的理论参数.The switching behavior of the nanomagnet logic device with the single missing corner shape defect is studied . We use micromagnetic simulation software to investigate preferred magnetization of the said peculiar shape nanomagnet logic device under various missing corner ranges , nanomagnet thicknesses and material parameters . The results indicate that the preferred magnetization of the missing corner‐type nanomagnet logic device fabricated with different materials appears in the neighboring critical missing corner amplitude , and that the nanomagnet fabricated with Permalloy is susceptible to the missing corner shape defect , higher saturation magnetization and thicker magnetic film block preferred magnetization of peculiar shape devices . These findings provide key theoretical parameters for how to control and apply the preferred magnetization of the peculiar shape nanomagnet logic device .

关 键 词：纳磁体逻辑器件 转换特性 首选磁化 奇异形状 

分 类 号：O471.1[理学—半导体物理] TN4[理学—物理]