自旋旋电子学材料:Fe_4N薄薄膜及其异质结构  

Spintronic Materials: Fe_4N Films and Its Heterostructures

作　　者：米文博[1] 

机构地区：[1]天津大学物理系天津市低维功能材料物理与制备技术重点实验室,天津300072

出　　处：《物理学进展》2015年第4期145-176,共32页Progress In Physics

基　　金：国家自然科学基金(51171126);天津市自然科学基金重点项目(12JCZDJC27100);教育部新世纪优秀人才支持计划(NCET-13-0409)的资助

摘　　要：本文综述了在自旋电子学器件上具有潜在应用前景的钙钛矿结构的Fe4N薄膜及其异质结构的研究成果和最新进展情况。文章从引言开始,介绍了钙钛矿结构Fe4N的晶体结构和基本性质;之后对多晶Fe4N薄膜、外延Fe4N薄膜、Fe4N/Co N双层膜、Fe4N/Alq3/Co自旋阀、以Fe4N为电极的隧道结的形貌、晶体结构、磁性、交换偏置、自旋相关的电输运特性和磁电阻效应进行了介绍;最后对Fe4N材料的相关研究结果进行了简单的总结和展望。A review on the state-of-arts of perovskite Fe4N thin films and heterostructures with promisingappolication potentials in advanced spintronics is presented, the brief introduction is followed by a highlight of the crystal structures and physical properties of pervskite Fe4N, and then a comprehensive description on a series of topics on Fe4N, including the preparations of polycrys- talline Fe4N thin films, epitaxial Fe4N, Fe4N/CoN bilayers, and Fe4N/Alq3/Co spin-valves on one hand, and on the other hand the characterizations on morphology and microstructures, magnetic properties, exchange bias, spin-dependent electrical transport and magnetoresistance etc, of the tunneling junctions with the Fe4N electrodes. Finally, a short summary with updated perspectives on recent researches on Fe4N is given.

关 键 词：自旋电子学 Fe4N薄膜 自旋阀 隧道结 表面形貌 晶体结构 磁性质 电输运特 性 磁电阻效应 

分 类 号：O484[理学—固体物理]