基于GaAs pin工艺的开关滤波器组芯片  

Switched Filter Bank Chip Based on GaAs pin Technology

作　　者：世娟[1] 白志中 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]空军军械通用装备军事代表局,北京100071

出　　处：《半导体技术》2015年第8期570-574,605,共6页Semiconductor Technology

摘　　要：基于GaAs pin工艺,研制了频率覆盖9.9~14.2GHz的三通道开关滤波器组单片微波集成电路（MMIC）芯片。开关滤波器组由输入/输出pin单刀三掷开关、带通滤波器组和pin开关偏置电路组合而成,集成在面积为4mm×4mm的GaAs衬底芯片上。每个支路的pin开关都采用串-并混合结构,控制电压-5V时开关导通,＋5V时开关截止。带通滤波器均采用分布参数梳状线结构,开路端加载金属-绝缘体-金属（MIM）电容减小了滤波器的尺寸。经探针台在片测试,结果表明,开关滤波器组MMIC芯片的三个通道中心插损为3.5~4.0dB,1dB相对带宽为16%~19%,35dB与1dB矩形系数比为1.9~2.2。Based on GaAs pin technology, a three channel switched filter bank monolithic micro- wave integrated circuit （MMIC） covered 9.9-14.2 GHz frequency was developed and fabricated. The switched filter bank was integrated in a 4 mm×4mm GaAs substrate chip, which comsisted of a input SP3T pin switch, a bandpass filter bank, a output SP3T pin switch and a bias circuit of the pin switch. The formation of the input and output SP3T pin switch were all adopted the series-shunt compound struc- ture. The switch is on at the control voltage of -5 V, and off at the control voltage of -5 V. The distri- buted combline structure was used in the bandpass filter, and resonators of bandpass filters were loaded by metal-insulator-metal （MIM） capacitors to obtain small size. The results of on wafer measurements show that the insertion loss at the center frequency of each channel in switched filter bank is 3.5-4. 0 dB, 1 dB fractional bandwidth is 16%-19%, and the rectangle coefficient of 35 dB than 1 dB is 1.9-2. 2.

关 键 词：单刀三掷开关 带通滤波器 开关滤波器组 GAAS pin工艺 耦合系数 

分 类 号：TN304.23[电子电信—物理电子学] TN43