带有非吸收窗口的大功率915nm半导体激光器  

High Power 915 nm Semiconductor Lasers with Non-absorbing Windows

作　　者：姚南[1] 赵懿昊[1] 刘素平[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083

出　　处：《半导体技术》2015年第8期596-600,共5页Semiconductor Technology

基　　金：中国科学院支撑项目(61501060206)

摘　　要：为了实现大功率输出,应用无杂质空位诱导量子阱混合(IFVD)方法制备带有非吸收窗口结构的915 nm半导体激光器单管。通过实验确定促进和抑制量子阱混合的Si O2和Si3N4薄膜的厚度分别为300和500 nm,退火条件为800℃,90 s。最终制备出的带有非吸收窗口的激光器,与普通激光器的阈值电流和斜率效率几乎一样。但普通激光器在电流为10 A时发生灾变性光学损伤(COD)并失效,而带有非吸收窗口的激光器在电流达到13 A时仍然可以正常工作,相比普通激光器其最大输出功率增加了15%。每种器件各20个在20℃,电流为9 A时进行直流老化试验,普通激光器在老化时间达到100 h时全部失效,而带非吸收窗口器件在老化200 h时仅有两个失效,这表明非吸收窗口结构显著提高了器件的抗COD能力。For achieving high output power, the high power 915 nm semiconductor lasers with non- absorbing windows were fabricated by using impurity-free vacancy disordering （IFVD）. The suitable thicknesses of SiO2 that promotes IFVD and Si3N4 that inhibits IFVD are 300 nm and 500 nm respective- ly, the temperature and time of rapid thermal annealing （RTA） are 800 ~C and 90 s. Finally, high power 915 nm semiconductor lasers with non-absorbing mirrors were fabricated, which almost had the same threshold current and slope efficiency as the normal high power 915 nm semiconductor lasers. Though normal lasers had catastrophic failures when the current was 10 A, lasers with non-absorbing mir- rors had no catastrophic failures even when the current was 13 A, whose output power improved 15% compared with normal lasers. Aging test was carried out for the devices with and without non-absorbing mirrors under 9 A at 20 ~C. All normal lasers failed when aging time reached 100 h, while only 20% of lasers with non-absorbing mirrors failed after 200 h＇ aging time, It indicated that non-absorbing mirrors fabricated by IFVD could improve lasers＇ ability to resist catastrophic optical damage （COD）.

关 键 词：半导体激光器 无杂质空位诱导量子阱混合(IFVD) 非吸收窗口 高温退火 灾变性光学损伤(COD) 

分 类 号：TN248.4[电子电信—物理电子学]