射频磁控溅射沉积铝掺杂氧化锌薄膜的研究  

Investigation of ZnO∶Al thin films deposited by RF magnetron sputtering

作　　者：杨立[1] 冯金晖[1] 徐睿[1] 王赫[1] 乔在祥[1] 

机构地区：[1]中国电子科技集团公司第十八研究所重点实验室,天津300384

出　　处：《电源技术》2015年第8期1682-1684,共3页Chinese Journal of Power Sources

摘　　要：采用射频磁控溅射法沉积铝掺杂氧化锌(Zn O∶Al,简称AZO)薄膜,研究了本底压强、溅射功率以及沉积时间对AZO薄膜光电性质的影响,优化了该层薄膜的沉积工艺。研究结果表明,在尽可能低的本底压强下,采用适中的溅射功率(500 W),制备出厚度约为500 nm的AZO薄膜,其电阻率达到5×10-4Ω·cm,可见光范围内的平均透过率达到82.7%。Al-doped ZnO （AZO） thin films were prepared by RF magnetic sputtering. The influence of background pressure, sputtering power and deposition time on the optical-electrical properties of AZO films was studied. The results indicate that using the lower background pressure and moderate sputtering power of 500 W, the AZO film is fabricated with the thickness of 500 nm, the conductivity of 5×10-4Ω·cm and the average transmittance in visible light spectrum of 82.7%.

关 键 词：铝掺杂氧化锌薄膜 射频磁控溅射 导电性 透过率 

分 类 号：TM914[电气工程—电力电子与电力传动]