超高压BCD工艺中多晶硅电阻的可靠性分析及实现  

The Reliability Analyses and Implementation of Polysilicon Resistors in EHV BCD Process

作　　者：包飞军[1] 曹刚 葛艳辉 石艳玲[1] 陈滔[1,2] 

机构地区：[1]华东师范大学信息科技与技术学院,上海200241 [2]上海华虹宏力半导体制造有限公司,上海201206

出　　处：《电子器件》2015年第3期495-498,共4页Chinese Journal of Electron Devices

摘　　要：多晶硅电阻由于其独特的温度特性及电迁移效应,阻值受温度和电流的影响很大,针对应用于超高压BCD工艺中的多晶硅电阻,其可靠性需进行特别分析和设计。通过对0.18μm 700 V BCD工艺中不同掺杂浓度多晶硅电阻的测试与分析,结合多晶硅结构、导电机制、焦耳热效应及电迁移理论,分析了焦耳热和电迁移对多晶硅电阻的影响,并实现了高压BCD工艺中高可靠性的多晶硅电阻。Temperature and current have great effects on polysilicon resistors. So,the reliability of polysilicon resistors used in EHV BCD should be specially analyzed. According to the test and analysis of the polysilicon resistors with different doping concentrations in 0. 18 μm 700 V BCD process combining with the theory of Joule heating effect,electromigration effect and polysilicon conductive mechanism,the effects of Joule heating and electromigration on polysilicon resistors have been analyzed. Then the methods were proposed to the implementation of polysilicon resistors with high reliability.

关 键 词：超高压BCD 多晶硅电阻 可靠性 焦耳热效应 电迁移 

分 类 号：TN36[电子电信—物理电子学]