电子束熔炼制备太阳能级多晶硅的研究现状与发展趋势  

Progress in Research and Development of Solar-grade Silicon Preparation by Electron Beam Melting

作　　者：谭毅[1,2] 石爽[1,2] 姜大川[1,2] 

机构地区：[1]大连理工大学材料科学与工程学院,大连116024 [2]大连理工大学辽宁省太阳能光伏系统重点实验室,大连116024

出　　处：《无机材料学报》2015年第8期785-792,共8页Journal of Inorganic Materials

基　　金：国家自然科学基金–云南联合基金(U1137601);高等学校博士学科点专项科研基金(20130041110004)~~

摘　　要：电子束熔炼具有高能量密度、高真空度等优点,能够有效地去除硅中的挥发性杂质,使其在制备太阳能级多晶硅材料方面具有巨大的优势和广阔的应用前景,目前已经实现了产业化应用,成为冶金法制备太阳能级硅材料的关键环节之一。本文在阐述挥发性杂质去除的热力学原理的基础上,对其去除效果和去除机制进行了总结。同时,针对电子束熔炼技术目前存在的问题,结合作者在这些方面的探索,从数值模拟、节能型熔炼方式以及与定向凝固技术的耦合等角度对现阶段的研究重点进行了综述,并对其未来的发展趋势进行了展望。Electron beam melting is an effective method to remove volatile impurities in silicon due to its characteris- tics of high energy density and high vacuum degree, which has huge advantages and wide application prospects in preparation of solar-grade silicon. Currently it has been successfully applied in industry and become one of the key procedures for preparation of solar-grade silicon by metallurgical route. Based on the thermodynamic principle of the volatile impurities removal, the removal efficiency and mechanism are summarized in this paper. According to current problems of this technology combined with our own experience, the emphasis of current research is reviewed from the points of numerical simulation, energy-saving melting technology and coupling with directional solidification tech- nology. The future development direction of this technology is also proposed.

关 键 词：电子束熔炼 多晶硅 挥发性杂质 综述 

分 类 号：TF134[冶金工程—冶金物理化学] TF89