单组分化学增幅型光致抗蚀剂LB膜的制备及光刻应用  

Preparation and photolithographic application of LB films as single-component resist based on chemical amplification

作　　者：王筠[1] 杨志广[1] 杨欢欢[1] 李铁生[2] 

机构地区：[1]周口师范学院化学系,周口466000 [2]郑州大学化学与分子工程学院,郑州450052

出　　处：《化工新型材料》2015年第8期228-230,共3页New Chemical Materials

基　　金：国家自然科学基金(20973157);河南省基础与前沿技术研究项目(142300410353);周口师范学院青年科研基金(zksyqn201318A)资助项目

摘　　要：合成了光致产酸剂N-对甲苯磺酸酯马来酰亚胺(TsOMI),及其与十二烷基甲基丙烯酰胺(DDMA)、对叔丁氧基苯乙烯碳酸酯(t-BOCSt)聚合得到三元共聚物。研究了该聚合物分子在气/液界面的成膜性,LB膜的光敏性和光刻性能。结果表明:该聚合物分子可在不同材质的基板上制备规整均匀的LB膜,在250nm紫外光照下,LB膜表现出化学增幅作用。以40层该聚合物LB膜为抗蚀层,经紫外曝光20min、显影10s后可得到分辨率为0.75μm(该掩膜所能达到的最大分辨率)的正型LB膜图形,进一步刻蚀得到分辨率为0.75μm的金膜图形。Photoacid generator N-（tosyloxy）maleinide （TsOMI） and terpolymer p（TsOMI-DDMA-t-BOCSt） were synthesisd. Then the film-forming property of terpolymer molecular on air/water surface along with the UV sensitivity and photolithographic performance were studied. The results showed that terpolymer molecular can be transferred to different solid wafers to form homogeneous LB films,which behaved good chemical amplification under 250 nm UV irradiation. Posi- tive patterns with the resolution of 0.75gm （the maximum resolution of mask）could be obtained by 20 minutes under deep UV irradiation followed by 10 seconds development using 40 layers LB films as resistant layer,the gold film pattern with the same resolution could be achieved in the further process of etching.

关 键 词：光致产酸剂 化学增幅 LB膜技术 光刻 

分 类 号：TB383.2[一般工业技术—材料科学与工程] O631.3[理学—高分子化学]