氮化铀薄膜的制备及性能研究  

Preparation and Characteristics of Uranium Nitride Thin Films

作　　者：陆雷[1] 肖红[1] 李芳芳[1] 钟永强[1] 白彬[1] 刘柯钊[1] 

机构地区：[1]中国工程物理研究院,四川绵阳621900

出　　处：《稀有金属材料与工程》2015年第8期1975-1978,共4页Rare Metal Materials and Engineering

基　　金：中国工程物理研究院基金资助(2011B0301057);国家自然科学基金资助(91026016)

摘　　要：开展了氮化铀薄膜射频制备及薄膜性能研究,通过优化氮化铀薄膜的制备工艺条件,成功在Si基片上制备了氮化铀薄膜,并利用扫描电镜、原子力显微镜、X射线电子衍射、俄歇电子能谱仪和X射线光电子能谱对氮化铀薄膜进行了表面形貌和结构组分分析。结果表明:利用射频磁控沉积法制备的氮化铀薄膜为比较平整和致密的U2N3和UNxOy的混合相组成,具有一定的抗氧化腐蚀性能。Uranium nitride thin films were prepared on the substrate of Si by a radio frequency magnetron sputtering method. Then the films were characterized by SEM, AFM, XRD and XPS. The results show that the uranium nitride thin films by radio frequency magnetron sputtering are fine and dense adherent, which are composed of U2N3 and UNxOy, possessing a considerable oxidation resistance.

关 键 词：氮化铀 薄膜 磁控溅射 

分 类 号：TB383.2[一般工业技术—材料科学与工程]