电子束蒸发制备新型非晶半导体MgSnO薄膜  

Novel Amorphous MgSnO Thin Films Prepared by E-beam Evaporation Technique

作　　者：何海英[1] 偰正才[1] 罗怡韵 夏远凤 牛憨笨[1] 

机构地区：[1]深圳大学光电工程学院光电子器件与系统(教育部/广东省)重点实验室,深圳518060

出　　处：《光电子技术》2015年第1期70-72,共3页Optoelectronic Technology

基　　金：国家自然科学基金资助项目(10974136)

摘　　要：采用电子束蒸发镀膜工艺制备一种新型非晶半导体MgSnO薄膜。薄膜在可见光区具有较高的透过率,其平均透过率范围在86.14～92.05%,薄膜的光学带隙随着Mg含量的增加而增大。霍尔效应测试表明MgSnO薄膜为n型半导体,Mg含量可在一定程度上控制薄膜的载流子浓度,MgSnO薄膜的载流子迁移率最高为1.59cm2 V-1s-1。Amorphous MgSnO thin films were prepared by e-beam evaporation technique.The films exhibited a high transmittance in the visible region.The average optical transmittance was in the range from 86.14%to 92.05%.The MgSnO thin films were n-type semiconductor.The carrier concentration was controlled by Mg content in the films.The highest Hall mobility of prepared film was 1.59cm2 V-1s-1.

关 键 词：MgSnO薄膜 电子束蒸发 电学特性 光学特性 

分 类 号：O484[理学—固体物理]