Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires  

作　　者：杨爽 窦秀明 喻颖 倪海桥 牛智川 江德生 孙宝权 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2015年第7期198-201,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Basic Research Program of China under Grant No 2013CB922304;the National Natural Science Foundation of China under Grant Nos 11474275 and 11204297

摘　　要：A highly efficient single-photon source based on a semiconductor quantum dot （QD） is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g（2） （0） at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires.A highly efficient single-photon source based on a semiconductor quantum dot （QD） is a promising candidate in quantum information processing. We report a single-photon source based on self-assembled GaAs QDs in nanowires with an extraction efficiency of 14%. The second-order correlation function g（2） （0） at saturate excitation power is estimated to be 0.28. The measured polarization of QD emission depends on the geometric relations between the directions of PL collection and the long axis of nanowires.

关 键 词：Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires QDs 

分 类 号：O471.1[理学—半导体物理] O413[理学—物理]