Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator  

作　　者：王会涛 周代兵 张瑞康 陆丹 赵玲娟 朱洪亮 王圩 吉晨 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2015年第8期83-86,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61274046,61474111 and 61321063;the National High-Technology Research and Development Program of China under Grant No 2013AA014202

摘　　要：We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well （MQW） electro-absorption modulators （EAMs）. In this work, the quantum confined Stark effect of the EAM is system- atically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f-3dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well （MQW） electro-absorption modulators （EAMs）. In this work, the quantum confined Stark effect of the EAM is system- atically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f-3dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.

关 键 词：EAM INP Optimization of 1.3 m InGaAsP/InP Electro-Absorption Modulator 

分 类 号：TN761[电子电信—电路与系统]