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作 者:何晓光 赵德刚 江德生 朱建军 陈平 刘宗顺 乐伶聪 杨静 李晓静 张书明 杨辉
机构地区:[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences
出 处:《Chinese Physics B》2015年第9期399-402,共4页中国物理B(英文版)
基 金:Project support by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126);the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017);the One Hundred Person Project of the Chinese Academy of Sciences;the Basic Research Project of Jiangsu Province,China(Grant No.BK20130362)
摘 要:AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas(2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas(2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.
关 键 词:high electron mobility transistor two-dimensional electron gas GAN
分 类 号:TN386[电子电信—物理电子学]
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