基于柔性衬底的Ti、F共掺ZnO透明导电薄膜的制备及其性能研究  

Synthesis and Properties of ZnO Thin Films Doped with Ti and F on Flexible Substrate

作　　者：邓皓谦 赵文达[1] 杜小琴[1] 晏忠[1] 吴晓京[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2015年第8期963-969,共7页Chinese Journal of Vacuum Science and Technology

摘　　要：为了制备出高性能的可挠透明导电薄膜,采用脉冲激光沉积技术在聚对苯二甲酸乙二醇酯(PET)衬底上制备了Ti、F共掺的Zn O(TFZO)透明导电薄膜。研究了不同衬底温度、氧分压及F的掺杂量对TFZO薄膜电学性能和光学性能的影响。实验结果表明,在衬底温度为150℃,氧分压为0.5 Pa,Ti、F掺杂量各为1%(原子比)时,制备的TFZO薄膜的电阻率达到1.69×10-3Ω·cm,可见光范围内平均透过率为81%。对薄膜进行弯曲可靠性测试和疲劳测试,向内、向外弯曲半径大于10mm时,薄膜电阻基本没有变化,在15 mm条件下弯曲1000次后薄膜亦无明显的电阻变化。The transparent ZnO thin films doped with Ti and F（ TFZO） were synthesized by pulsed laser deposition（ PLD）,on flexible substrate of polyethylene terephthalate（ PET）. The effect of the substrate temperature,oxygen partial pressure,and contents of Ti and F,on the microstructures,optical and electrical properties of the TFZO coatings was investigated with X-ray diffraction,X-ray photoelectron spectroscopy,atomic force microscopy,ultra violet visible（ UV-Vis） spectroscopy,and conventional surface probes. The results show that under the optimized conditions,high quality TFZO coatings were deposited. To be specific,grown at 150℃ and 0. 5 Pa of oxygen partial pressure,and with 1. 0%（ at.） of Ti and F dopants,the TFZO coatings have a resistivity of 1. 69 × 10^-3Ω·cm and an average transmittance of 81% in the visible range. Besides,no observable change in resistivity of the coatings was measured,after bending for 1,000 times with a bending curvature radius of 15 mm in the fatigue test.

关 键 词：透明导电薄膜 Ti、F共掺杂ZnO PET柔性衬底 脉冲激光沉积 

分 类 号：O484.1[理学—固体物理]