液栅型石墨烯场效应管的缓冲液浓度和pH响应特性  

Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration

作　　者：杜晓薇[1,2] 成霁[1,2] 郭慧[1] 金庆辉[1] 赵建龙[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海200050 [2]中国科学院大学,北京100049

出　　处：《电化学》2015年第2期167-171,共5页Journal of Electrochemistry

基　　金：国家科技支撑计划项目(No.2012BAK08B05);国家863计划项目(No.SS2014AA06A506);中科院国际合作项目(No.GJHZ-1306);江苏省科技项目(No.BE2012049)资助

摘　　要：本文使用化学气相沉积(Chemical Vapor Deposition,CVD)石墨烯制作了高灵敏度、低噪声的液栅型石墨烯场效应管(Solution-Gated Graphene Field Effect Transistors,SGFETs),并测试了该器件对磷酸盐缓冲液(Phosphate Buffered Saline,PBS)浓度和p H的响应特性.随缓冲液浓度的增大,SGFETs转移特性曲线的最小电导点向左偏移,偏移量与溶液浓度的自然对数呈线性关系.随p H的增大,其最小电导点向右偏移,偏移量与溶液p H呈线性关系.该响应特性对石墨烯生化传感器排除外界影响因素有一定的指导作用.High-sensitivity and low-noise solution-gated graphene field effect transistors（SGFETs） were fabricated using chemical vapor deposition（CVD） graphene as a channel material, and their response characteristics to concentration and p H of phosphate buffered saline（PBS） were measured. The minimum conductance point shifted to left with increasing concentration, and the offset showed a linear relationship with the natural logarithm of concentration. While, the minimum conductance point shifted to right with increasing p H, and the offset showed a linear relationship with p H. The research on these response characteristics may give proper guidance to SGFETs＇ s application.

关 键 词：化学气相沉积石墨烯 液栅型石墨烯场效应管 缓冲液浓度和pH 

分 类 号：TQ127.11[化学工程—无机化工]