工艺参数对低电容TVS器件耐压的影响  

Effects of Process Parameters on Breakdown Voltage of Low Capacitance TVS Devices

作　　者：陈天 谷健 郑娥 

机构地区：[1]上海新进半导体制造有限公司,上海200233

出　　处：《固体电子学研究与进展》2015年第2期180-186,共7页Research & Progress of SSE

摘　　要：分析了低压低电容TVS器件的击穿原理,从NPLUS集电极区杂质浓度、杂质注入能量及退火激活温度三个方面探究了工艺条件对低击穿电压的影响,最终优化选择了工艺参数并制作了低压TVS器件。低压低电容TVS器件采用集成工艺将低电容二极管与TVS管集成在同一芯片上,解决了实际应用中低电容的需求。通过传输线脉冲测试器件展现了优良的抗ESD能力,有利于对主器件实施更可靠的保护。The breakdown characteristics of low voltage low capacitance transient voltage suppressor（TVS）device were analyzed,and the influence of impurity density,implant energy and annealing temperature on breakdown voltage was discussed Finally,the process parameters to establish a full flow were elaborated and the TVS device was thus fabricated.Process-integration was used to make the TVS diode and low-capacitance diode work on the same chip,which can meet the need of low capacitance in application.TLP test shows that the device has good antistatic property and improves the reliability of TVS device,which is useful to protect the main devices.

关 键 词：瞬态电压抑制器 击穿电压 低电容 

分 类 号：TN312.4[电子电信—物理电子学]