0.9Pb(Sc_(0.5)Ta_(0.5))O_3-0.1PbTiO_3铁电薄膜漏电流机制  

Mechanism of Leakage Current of 0.9Pb( Sc_(0.5)Ta_(0.5)) O_3-0.1PbTiO_3 Ferroelectric Films

作　　者：李雪冬[1,2] 刘刚[1] 刘洪[2] 吴家刚[2] 肖定全[2] 朱建国[2] 

机构地区：[1]绵阳师范学院物理与电子工程学院,四川绵阳621000 [2]四川大学材料科学与工程学院,四川成都610064

出　　处：《绵阳师范学院学报》2015年第8期6-9,共4页Journal of Mianyang Teachers＇ College

基　　金：绵阳师范学院科研课题项目(QD2013A07)

摘　　要：以 LaNiO3做缓冲层，用射频磁控溅射法在 SiO2/ Si（100）衬底上制备出0.9Pb（Sc0.5 Ta0.5）O3﹣0.1Pb-TiO3铁电薄膜.采用两步法在峰值温度750℃对薄膜进行退火.分析了薄膜的漏电流机制，研究表明，薄膜漏电流在低场强下（﹤32kV/ cm）符合欧姆（热电子发射）导电机制并受到晶界限制行为的影响，在中场强下（32~85kV/cm）空间电荷限制电流（SCLC）机制占据优势，在高场强下（85~100kV/ cm）富勒﹣诺丁海姆（FN）隧穿机制起主导作用.The 0. 9pb（Sc0. 5 Ta0. 5 ）O3 ﹣ 0. 1pbTiO3 ferroelectric thin films were prepared on SiO2 / Si（100） substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and electrode layer,and the films were subsequently annealed by a two ﹣ step rapid thermal annealing approach. The mechanism of leakage current of the films was analyzed. Ohm conduction and a grain boundary limit behavior are responsible for the leakage be-havior of the films in a low electric field region,respectively,a space charge limit conduction dominated in a me-dium electric field region,while an interface ﹣ limited Fowler ﹣ Nordheim tunneling is involved in their leakage behavior in a high electric field region.

关 键 词：铁电薄膜 漏电流 机制 

分 类 号：O484[理学—固体物理]