Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates  

作　　者：蒋仁渊 许晟瑞 张进成 姜腾 江海清 王之哲 樊永祥 郝跃 

机构地区：[1]Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

出　　处：《Chinese Physics Letters》2015年第9期154-157,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61204006;the Fundamental Research Funds for the Central Universities under Grant No K50511250002

摘　　要：Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy （SIMS）. Surface morphology, structural quality and related impurity incorpora- tion are very sensitive to the growth temperature. A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films, which is confirmed by SIMS analysis. Our results show that the sample with triangular-pit morphology has sample with pentagon-like pit morphology, which is significantly higher concentrations of oxygen than the other induced by the existence of an N-face in triangular pits.Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy （SIMS）. Surface morphology, structural quality and related impurity incorpora- tion are very sensitive to the growth temperature. A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films, which is confirmed by SIMS analysis. Our results show that the sample with triangular-pit morphology has sample with pentagon-like pit morphology, which is significantly higher concentrations of oxygen than the other induced by the existence of an N-face in triangular pits.

关 键 词：GAN Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar a-Plane GaN Grown on r-Sapphire Substrates 

分 类 号：O484[理学—固体物理]