Characteristics of sputtered Y-doped IZO thin films and devices  

作　　者：王丹丹 王卿璞 王汉斌 张锡健 武丽伟 李福杰 袁帅 

机构地区：[1]School of Physics,Shandong University

出　　处：《Journal of Semiconductors》2015年第9期30-35,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.51042006);the National Fund for Fostering Talents of Basic Science(No.J0730318);the Foundation of Jinan City for University Innovation

摘　　要：Yttrium-doped IZO （YIZO） thin films with different thickness have been prepared on soda-lime glass （SLG） and P-Si substrates by radio frequency magnetron sputtering at room temperature. Structural morphology and optical properties of the films have been investigated. gate-structure are fabricated on P-Si substrates. The output YIZO thin film transistors （TFTs） with the bottomand transfer characteristics of YIZO-TFT have been studied. It has been found that all YIZO thin films prepared at room temperature are amorphous, and the YIZO TFTs exhibit n-channel depletion mode. Y1ZO-TFT with active layer thickness of 20 nm shows an on/offratio over 105, a sub-threshold swing of 2.20 V/decade at a low operating voltage of -1.0 V, and saturation mobility values over 0.57 cm3/（V.s）.Yttrium-doped IZO （YIZO） thin films with different thickness have been prepared on soda-lime glass （SLG） and P-Si substrates by radio frequency magnetron sputtering at room temperature. Structural morphology and optical properties of the films have been investigated. gate-structure are fabricated on P-Si substrates. The output YIZO thin film transistors （TFTs） with the bottomand transfer characteristics of YIZO-TFT have been studied. It has been found that all YIZO thin films prepared at room temperature are amorphous, and the YIZO TFTs exhibit n-channel depletion mode. Y1ZO-TFT with active layer thickness of 20 nm shows an on/offratio over 105, a sub-threshold swing of 2.20 V/decade at a low operating voltage of -1.0 V, and saturation mobility values over 0.57 cm3/（V.s）.

关 键 词：Y doped IZO thin film TFT active layer 

分 类 号：TN304.21[电子电信—物理电子学]