Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs  

作　　者：方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军 赵超 Cor Claeys 

机构地区：[1]IMEC [2]E.E. Depart. KU Leuven [3]Key Laboratory of Microelectronic Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences [4]Graduate Institute of Photonics and Optoelectronics and Department of Electrical,Engineering,National Taiwan University [5]Micron Technology Belgium,IMEC Campus

出　　处：《Journal of Semiconductors》2015年第9期66-70,共5页半导体学报（英文版）

摘　　要：This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.

关 键 词：random telegraph noise low frequency noise ultra-thin BOX SILICON-ON-INSULATOR single charge trap 

分 类 号：TN386[电子电信—物理电子学] TB53[理学—物理]