Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser  

作　　者：柯青 谭少阳 刘松涛 陆丹 张瑞康 王圩 吉晨 

机构地区：[1]Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第9期89-92,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61274046,61201103);the National High Technology Research and Development Program of China(No.2013AA014202)

摘　　要：A comprehensive design optimization of 1.55-#m high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency （ηi） while maintaining the low internal loss （αi） of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high αi and overall slope efficiency. A continuous wave （CW） single side output power of 160 mW was obtained for an uncoated laser with a 50μm active area width and 1 mm cavity length.A comprehensive design optimization of 1.55-#m high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency （ηi） while maintaining the low internal loss （αi） of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high αi and overall slope efficiency. A continuous wave （CW） single side output power of 160 mW was obtained for an uncoated laser with a 50μm active area width and 1 mm cavity length.

关 键 词：high power laser INP internal loss internal quantum efficiency 

分 类 号：TN248[电子电信—物理电子学]