GaN基半导体光伏电池的制备和特性研究  

Fabrication and Characteristics of GaN-based Solar Cells

作　　者：蔡晓梅[1] 张江勇[2] 吕雪芹[3] 应磊莹[2] 张保平[2] 

机构地区：[1]集美大学理学院,福建厦门361021 [2]厦门大学信息科学与技术学院 [3]厦门大学萨本栋微米纳米技术研究院,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2015年第5期665-673,共9页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金(61404059;61274052);集美大学科研启动基金(ZQ2013011)

摘　　要：制备了3种低In组分(即原子分数)的InGaN p-i-n同质结太阳能电池,均显示良好的光伏响应特性,并对电池开路电压随In组分增大而急剧下降的内在机理作了深入分析.而后,改进外延结构采用相同工艺制作InGaN p-i-n异质结太阳能电池,并与同质结太阳能电池进行了对比分析,提出异质结是InGaN电池结构的较好选择.为了扩展太阳光的吸收范围,制作了InGaN多量子阱结构电池,指出合理设计器件结构是今后研究的关键,为进一步的研究发展提供了思路.Three kinds of InxGa1-x N p-i-n homojunction （HOJ） solar cells （SCs） with comparatively low In contents were fabricated and demonstrated to show excellent photovoltaic-response characteristics. Possible mechanisms for the drastic decrease of open-circuit voltages （Voc） with increasing In contents were discussed. For comparison, heterojunction （HEJ） SCs were also fabricated and inves- tigated. Through comparing HOJ and HEJ SCs,we propose that HEJ structure is a better candidate for InGaN SCs. For the purpose of broadening the response range to the solar spectrum,SCs with InGaN/GaN multiple quantum well （MQW） as the absorption region were fabricated and optimal design of the device structure was found to be of great importance. These results provide useful references for the future research.

关 键 词：INGAN 太阳能电池 结构 

分 类 号：TN312.8[电子电信—物理电子学]