GaN基发光二极管透明导电层与n-GaN方阻的匹配研究  

Study on Sheet Resistance of n-GaN Layer Matching the Transparent Conductive Layer of GaN-based LEDs

作　　者：汪延明 付宏威 徐林炜 苗振林 梁智勇 许亚兵 戚运东 

机构地区：[1]湘能华磊光电股份有限公司,郴州423038

出　　处：《材料导报（纳米与新材料专辑）》2015年第1期229-232,共4页

摘　　要：研究了ITO与n-GaN方阻的大小关系对电流扩展的影响,结果表明,在一定电极图形设计下,当ITO方阻大于n-GaN层方阻时,电流朝P电极附近集中,当ITO方阻小于n-GaN层方阻时,电流朝N电极附近集中,只有在ITO与n-GaN方阻接近时,芯片电流扩展才最佳。The influence of sheet resistance relation between ITO and n-GaN layers on the current spreading was researched. The result indicated that the current crowding nearby the P-electrode when the sheet resistance of ITO greater than n-GaN layer, the current crowding nearby the N-electrode or N-PAD when the sheet resistance of ITO less than n-GaN layer under a confirm electrode pattern. Current spreading was the best when the sheet resistance of ITO was close to the n-GaN layer .

关 键 词：发光二极管 方阻 电流扩展 匹配 

分 类 号：TN312.8[电子电信—物理电子学]