Na掺杂工艺对CIGS薄膜及柔性器件性能的影响  

Influence of Na-doping process on performance of CIGS film and flexible solar cells

作　　者：杨立[1] 田园[2] 王赫[1] 乔在祥[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384 [2]河北工业大学城市学院,天津300130

出　　处：《电源技术》2015年第9期1909-1911,共3页Chinese Journal of Power Sources

摘　　要：采用共蒸发三步法在聚酰亚胺(PI)衬底上沉积CIGS薄膜,研究了Na掺杂工艺对PI衬底生长的CIGS薄膜性质及柔性太阳电池性能的影响。前掺Na工艺可有效改善吸收层CIGS薄膜电学性质,但会阻碍In、Ga互扩散,并导致CIGS薄膜结晶质量下降。这是由于在CIGS薄膜沉积过程中掺入Na原子,影响了薄膜生长的动力学过程。后掺Na工艺在提高吸收层CIGS薄膜电学性质的同时,避免了Na原子扩散对CIGS薄膜结晶质量的影响,最终提高了柔性CIGS薄膜太阳电池性能。CIGS films were deposited on Polyimide foils by three-stage co-evaporation process. The influence of Na-doping technique on the properties of CIGS films and performance of flexible solar cells was investigated. The process of pre-Na-doping improves the electrical properties of CIGS film absorber, but hinders the inter-diffusion of Ga and In atoms and reduces the crystal quality of CIGS film, which is attributed to the influence of Na-doping on the growth kinetics of CIGS films. The process of post-Na-doping improves the electrical properties of CIGS film absorber and has no effect on the crystallization of CIGS films, gaining more high efficiency of flexible CIGS thin film solar cell.

关 键 词：掺Na CIGS薄膜 柔性太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]