退火温度对透明导电Ga_2O_3/ITO周期多层膜性能的影响  

Effect of Annealing Temperature on Performance of Transparent Conductive Ga_2O_3/ITO Periodic Multilayer Films

作　　者：赵银女[1] 

机构地区：[1]鲁东大学教务处,山东烟台264025

出　　处：《材料科学与工程学报》2015年第4期559-563,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(10974077);山东省研究生教育创新计划资助项目(SDYY13093)

摘　　要：用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO靶材在石英玻璃衬底制备Ga2 O3 /ITO周期多层膜.样品在300～800℃真空退火1小时,研究退火温度对薄膜光学和电学性能的影响.400℃退火的Ga2O3/ITO周期多层膜面电阻和电阻率低至68.76Ω/□和3.47×10-3Ω·cm,载流子浓度和霍尔迁移率高达1.30×1020 cm-3和14.02cm2 V-1 s-1.退火温度超过500℃后,Ga2O3膜层和ITO膜层之间开始相互扩散,薄膜结晶质量和导电性变差.所有退火薄膜在紫外-可见光范围的平均光学透过率高于83％,光学带边吸收随退火温度增加发生蓝移,光学带隙从4.59eV增加到4.78eV.Ga2O3/ITO periodic multilayer films were deposited on quartz glass substrates by radio frequency magnetron sputtering GazO3 target and direct current magnetron sputtering ITO target. All samples were annealed in vacuum environment at 300-800℃ for 1 hour. The influences of annealing temperature on the optical and electric properties of the Ga203/ITO multilayer films were studied. The sheet resistance of 68.76 12.sq-1, resistivity of 3.47 × 10-3Ω· cm, carrier concentration of 1.30 ×1020 cm-3 and hall mobility of 14.02cm2 V-1 s-1 were obtained for 400℃ annealed Ga2 03/ITO periodic multilayer films. After 500℃ annealing and above however, the diffusion process takes place between GazO3 layer and ITO layer, and thus the crystallinity and conductivity of the films start to deteriorate. All annealed films show an average transmittance of above 83% in visible and UV regions. The band-edge optical absorption is blue shifted and the optical band gap increases from 4.59eV to 4. 78eV with the increase of annealing temperature from 300℃ to 800℃

关 键 词：磁控溅射 多层膜 透明导电膜 退火 光学性质 电学性质 

分 类 号：TN304.9[电子电信—物理电子学] O474[理学—半导体物理]