基于柔性玻璃衬底ZnO∶B薄膜的非晶硅太阳能电池的制备及其光电性能研究  

Growth and Photoelectric Properties of ZnO∶B Thin Films on Flexible Glass Substrate for Amorphous Silicon Solar Cells

作　　者：李旺[1,2] 朱登华[3] 刘石勇[1] 刘路[1] 王仕鹏[1] 黄海燕[1] 杨德仁[2] 牛新伟[1] 杜国平[3] 

机构地区：[1]浙江正泰太阳能科技有限公司,杭州310053 [2]浙江大学硅材料国家重点实验室,杭州310027 [3]南昌大学材料科学与工程学院,南昌330031

出　　处：《人工晶体学报》2015年第8期2057-2062,共6页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)(2012AA052401);国家自然科学基金(61366004)

摘　　要：采用低压化学气相沉积法(LPCVD)在大面积(40 cm×40 cm)超薄柔性玻璃和硬质玻璃衬底上分别制备了B掺杂的ZnO(BZO)透明导电薄膜及非晶硅薄膜太阳能电池,对比了两种衬底上BZO薄膜的形貌、光学和导电性能及其非晶硅薄膜电池的性能。结果表明,在相同LPCVD工艺下,超薄柔性玻璃衬底上BZO薄膜的生长速率相对减小;当生长相同厚度BZO薄膜时,超薄柔性玻璃衬底的透光率相对于硬质玻璃衬底提高约2%,同时并具有相同的导电能力。在柔性玻璃衬底上制备的非晶硅薄膜电池的初始和稳定转化效率也相对提高,分别达到9.16%和7.82%。Transparent conductive B-doped ZnO （BZO） thin films were deposited on thin flexible glass （FG） and thick hard glass （HG） substrates by a low pressure chemical vapor deposition （LPCVD） technique. Amorphous silicon （a-Si）solar cells were fabricated using the BZO films as front electrode. The optical and electrical properties of the ZnO： B thin films on FG and HG substrates were investigated. The results show that the growth rate of BZO thin films on the FG substrate are relatively lower than on the HG substrate under the same deposition conditions. When the two BZO films have a same thickness, the optical transmittance of the BZO-eoated FG substrate is higher than the BZO-eoated HG substrate by about 2% , however, they have the same conductivity. The a-Si solar cells based on the FG substrate exhibite relatively higher conversion efficiency than on the HG substrate, and their initial and stabilized conversion efficieneies are found to be 9.16% and 7.82% ,respectively.

关 键 词：柔性衬底 低压化学气相沉积 B掺杂ZnO 非晶硅薄膜 太阳能电池 

分 类 号：TN204[电子电信—物理电子学]