氮化铝纳米线直接氮化制备工艺优化及形成机理分析  

Optimization of Synthesis Technique and Formation Mechanism for AlN Nanowires via Direct Nitridation

作　　者：李阳[1] 陈奎[1] 

机构地区：[1]五邑大学应用物理与材料学院,江门529020

出　　处：《人工晶体学报》2015年第8期2277-2283,共7页Journal of Synthetic Crystals

基　　金：广东省教育厅科技创新项目(2012KJCX0100);广东省自然科学基金(S2011040005742);广东省教育厅教育科学项目(2014GXJK097);江门市科技计划项目

摘　　要：采用金属铝粉与氮气在一定温度下直接反应的方法,利用金属镁粉与NH4Cl双重辅助氮化的优越性,制备出性能较好的氮化铝粉体纳米材料,主要包括纳米颗粒及纳米晶须。通过优化反应物的添加剂配比、反应温度、保温时间等反应条件,得到了形貌较好的氮化铝纳米线材料。在此基础上分析了氮化铝纳米线的反应生成过程,并采用VS机制对纳米线的生长机理进行了解释。AIN nanowires were synthesized by the direct reaction of aluminum metal powders with nitrogen gas at a certain temperature. Taking advantages of metal magnesium powder with NH4Cl by dual auxiliary nitridation, the aluminum nitride powder nanomaterials with better performance were prepared, including nanoparticles and nano-whiskers. By optimizing the reactants additive ratio, reaction temperature, holding time and other reaction conditions, aluminum nitride nanowires with better morphology has been obtained. On the basis, the growth process of aluminum nitride nanowires were analyzed, the nanowires mechanisms using the vapor-solid growth mechanism.

关 键 词：ALN AlN纳米线 氮化 VS机制 

分 类 号：TN204[电子电信—物理电子学]