功率场效应管高频建模方法  

High frequency modeling methods of power MOSFET

作　　者：张智娟[1] 左玉梅[1] 

机构地区：[1]华北电力大学电气与电子工程学院,河北保定071003

出　　处：《电子技术应用》2015年第10期119-122,共4页Application of Electronic Technique

基　　金：河北省自然科学基金资助项目(F2014502041)

摘　　要：开关器件在开通和关断暂态过程中产生的高电压和电流变化是电磁干扰(EMI)的主要来源。准确的EMI预测需要对功率器件开关瞬间的动态行为进行精确地描述。首先介绍了两种常见的功率场效应管的建模方法、子电路模型和集总电荷模型。然后提出利用Saber建模工具Model Architect对功率场效应管进行建模。最后利用Saber软件建立逆变器电路模型进行仿真对比,得到了功率场效应管的开关波形和电路的传导干扰波形。仿真的结果显示,用Saber中Model Architect建模工具所建的模型能够反映较为实际的情况,相对准确地预测电路中的电磁干扰。The major EMI source of the power converter is the changes of high voltage and current during the switching transient. An accurate prediction of EMI needs the precise description of the switching transient. First, two common used power MOSFET models, the sub circuit model and the lumped charge model are described. Then the power MOSFET is modeled by the model architect. Finally by using the Saber software, inverter circuit simulation model is proposed to build, the switching waveforms of power MOSFET and the simulation waveforms of the conducted EMI are obtained. It is shown that the model built by model architect tools can reflect the real situation and more accurately predict electromagnetic interference in the circuit.

关 键 词：功率场效应管 建模 极间电容 MODEL ARCHITECT 

分 类 号：TN386.2[电子电信—物理电子学]