高速硅基光电器件发展现状及趋势  

Development Status and Trends of High Speed Silicon Based Optoelectronic Devices

作　　者：汪金华[1] 庄永河[1] 倪敏[1] 游超[1] 

机构地区：[1]中国电子科技集团公司第43研究所,合肥230022

出　　处：《混合微电子技术》2015年第1期1-4,共4页Hybrid Microelectronics Technology

摘　　要：大数据、云计算等热点产业的快速发展，迫切需要大量低成本、高集成度的高速光电器件。硅基光电器件具有低成本、易集成等优势，近年来受到广泛关注。首先简要介绍了高速硅基光电器件的研究现状和进展，随后详细阐述了高速硅基光电器件目前在芯片设计、器件封装等方面的一些关键技术和难点，并介绍了在高速硅基光电器件封装和制作方面的研究成果，最后展望了其未来发展趋势。As the rapid development of big data and cloud computing, large number of low cost and high integration high speed optoelectronie devices are demanded urgently. The high speed silicon based devices have gained widespread attention because it features of low cost and easy integration. Firstly this paper briefly presents the,research status and progress ,then the key technology and difficulties of chip design and packaging for high speed silicon based optoelectronic devices are expounded in detail. Our research on fabrication and packaging for high speed silicon based optoelectronic devices is reported. Lastly the trend of future development is prospected.

关 键 词：大数据 硅基 高速光电器件 

分 类 号：TN36[电子电信—物理电子学]