涂层导体外延MgO层的织构与表面形貌探究（英文）  

INVESTIGATION OF SURFACE MORPHOLOGY AND TEXTURE IN HOMOEPITIAXIAL MgO FOR COATED CONDUCTOR

作　　者：宁纪林 赵苏串[1] 范峰[1] 鲁玉明[1] 金晓燕[1] 邱文彬[1] 郭艳群[1] 刘志勇[1] 白传易[1] 蔡传兵[1] 

机构地区：[1]上海大学超导与应用技术中心,上海200444

出　　处：《低温物理学报》2015年第5期335-340,共6页Low Temperature Physical Letters

基　　金：Project supported by the Science and Technology Commission of Shanghai Municipality(Grant Nos.11dz1100300;13dz1102302);the National Natural Science Foundation of China(Grant No.11174193)~~

摘　　要：采用直流反应磁控溅射技术在IBAD-MgO基底上外延生长MgO.良好的MgO薄膜(面内织构度FWHM<7°,表面均方根粗糙度RMS<2nm)能够在较宽的温度区间400℃到500℃间获得.对于温度影响的MgO薄膜生长,我们采用了基于密度泛函的第一性原理进行模拟,得到与实验结果相符合的结论:过高的温度在损害薄膜织构的同时,会造成表面粗糙度的增加.而与之相反的:薄膜厚度由40nm增加到600nm时,薄膜织构虽然优化但会损害薄膜表面.薄膜的岛状生长与Ehrlich–Schwoebel(ES)势垒,是造成表面恶化的主要原因.Epitaxial MgO （Epi-MgO） layers were prepared on IBAD-MgO template using DC reactive sputtering technique. Biaxially textured Epi-MgO films （in-plane alignment FWHM （〈7°） with good surface morphology（Rrms〈2nm）could be obtained at relatively lower temperature ranging from 400℃ to 500℃. First-principles with density-functional theory were used to simulation the growth of MgO films. It was demonstrated that excessive temperature could block the regular molecular arrangements, which thereby influence biaxial texture of Epi-MgO films. The texture and surface morphology of MgO with different thickness ranging from 40 nm to 600 nm were investigated. The FWHM values of Epi-MgO films decreased with the inereasing thickness, whereas the surface roughness showed a converse trend. The deteriorated surface morphology of Epi-MgO may arise from the larger islands caused by Ehrlich-Schwoebel （ES） barrier in thicker films.

关 键 词：缓冲层 涂层导体 MGO 

分 类 号：O484.1[理学—固体物理]