PI衬底n-i-p结构非晶硅薄膜太阳能电池的制备  

Fabrication of n-i-p Type Amorphous Silicon Thin Films Solar Cells on PI Substrates

作　　者：李旺[1,2] 刘石勇[1] 刘路[1] 王仕鹏[1] 黄海燕[1] 牛新伟[1] 陆川[1] 

机构地区：[1]浙江正泰太阳能科技有限公司,杭州310053 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《人工晶体学报》2015年第9期2350-2353,2358,共5页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)(2012AA052401)

摘　　要：利用传统硅薄膜太阳能电池生产设备、以硬质玻璃为载板,在低透光率的聚酰亚胺(PI)衬底上制备了n-i-p结构的单结非晶硅(a-Si)薄膜太阳能电池组件,并通过掩膜绝缘和激光划分绝缘组合的方式在同一块PI衬底上实现了多节电池串联一体的结构。封装后电池组件的有效发电面积的转化效率达到5.13%,电池的转化效率还存在较大的提升空间。Series-connected amorphous silicon（ a-Si） thin film solar cells with n-i-p configuration were fabricated on PI substrates using the traditional a-Si thin film solar cell production equipment. PI substrates were carried by hard glass plates during fabrication process of a-Si films solar cells. Mask scribing and laser scribing were used successfully to form series-connected multiple section monolithic structure of a-Si thin film cells. It is found that the effective area conversion efficiency of a-Si solar cell module on PI substrate is as high as 5. 13%,and the conversion efficiency will be further improved by optimization of fabricating process of a-Si thin film cells.

关 键 词：聚酰亚胺 n-i-p结构 激光划分绝缘 掩盖分割 非晶硅薄膜 太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]