相变存储器失效时间分析  

Analysis of failure time in phase change memory

作　　者：魏宏阳[1,2] 蔡道林[1] 陈一峰[1] 霍如如 宋志棠[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100080

出　　处：《电子元件与材料》2015年第10期40-42,63,共4页Electronic Components And Materials

基　　金：中国科学院战略性先导科技专项资助(No.XDA09020402);国家重点基础研究发展计划资助(No.2013CBA01900;No.2010CB934300;No.2011CBA00607;No.2011CB9328004);国家集成电路重大专项资助(No.2009ZX02023-003);国家自然科学基金资助(No.61176122;No.61106001;No.61261160500;No.61376006);上海市科委项目资助(No.12nm0503701;No.13DZ2295700;No.12QA1403900;No.132R1447200)

摘　　要：从保持力失效时间的角度出发,对相变存储器实施了保持力加速寿命实验。实验过程中发现,在比较高的温度下,随着测试时间的增长,存储器单元的RESET阻值会逐渐变小。这个现象符合Arrhenius模型。而且,温度越高,失效时间越短。不同初始RESET阻值条件下的阻值分布曲线也验证了通过增加非晶区域的有效体积可以改善保持力可靠性。不同存储器单元的失效时间分布也验证了一个假设:若在非晶区域中本来就存在晶粒,则晶粒生长重组会缩短失效时间;若是晶化过程发生在非晶区域和结晶区域的边界处,失效时间会明显增长。An acceleration test was carried out to have a deeper understanding on retention characterization of failure time in phase change memory. As the time flows, the resistance would decrease under a high temperature, which can also be induced from the Arrhenius model. The higher the temperature, the shorter the failure time. The distributions for different values of initial RESET resistance suggested that improving the active volume of chalcogenide amorphous region will be beneficial for the retention reliability. The failure time distribution of different cells also represent a hypothesis that the grain growth with nucleation existing in the amorphous region induces a shorter time, while the grain growth at the boundary between amorphous/crystalline regions induces a longer one.

关 键 词：相变存储器 RESET 失效时间 温度 阻值 晶粒生长 

分 类 号：TN407[电子电信—微电子学与固体电子学]