前结背接触晶硅太阳电池发射区研究  

Emitter study of front junction back contact crystalline silicon solar cells

作　　者：周涛[1] 陆晓东[1] 吴元庆[1] 刘兴辉[2] 吴春瑜[2] 

机构地区：[1]渤海大学新能源学院,辽宁锦州121000 [2]辽宁大学物理学院,辽宁沈阳110036

出　　处：《电子元件与材料》2015年第10期43-47,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.11304020)

摘　　要：利用Silvaco-TCAD仿真软件全面系统地分析了发射区表面浓度(cE)、结深(xj)及发射区覆盖比率(EF)对P型前结背接触晶硅太阳电池输出特性的影响。结果表明:基于常规低成本P型晶硅衬底(利用直拉法生长,电阻率为1.5?·cm,少子寿命为10μs)的前结背接触太阳电池,其上表面发射区表面浓度及结深对太阳电池的输出特性产生显著影响。上表面发射区表面浓度和结深越大,短波入射光外量子效率越小。当上表面发射区表面浓度为1×1019 cm–3,结深为0.2μm时,电池效率高达20.72%。侧面和下表面发射区表面浓度及结深对太阳电池输出特性的影响较小。但侧面和下表面发射区覆盖比率对太阳电池的输出特性产生显著影响。侧面和下表面发射区覆盖比率越大,太阳电池外量子效率和转换效率越高。By using Silvaco-TCAD simulation software, the influences of the emitter surface concentration （cE）, the junction depth （xj） and the emitter fraction （EF） on the output characteristics of P-type front junction back contact crystalline silicon solar cell was analyzed. The results show that the upper surface emitter surface concentration and the junction depth of the front junction back contact crystalline silicon solar cell based on conventional low-cost P-type silicon substrate （CZ growth method, the resistivity is 1.5Ω·cm, the minority carrier life is 10μs） have a noticeable effect on output characteristics of solar cells. The higher the upper surface emitter surface concentration, the deeper the junction depth, the lower the short wavelength incident light external quantum efficiency. When the upper surface emitter surface concentration is 1×1019 cm–3 and the junction depth is 0.2μm,the solar cell conversion efficiency reaches 20.72%. The side-surface and under-surface emitter surface concentration and the junction depth have a slight effect on output characteristics of solar cells, while the side-surface and under-surface emitter fraction has a noticeable effect on output characteristics of solar cells. The greater the side-surface and under-surface emitter fraction, the higher the external quantum efficiency and conversion efficiency.

关 键 词：前结背接触 太阳电池 发射区 表面浓度 结深 量子效率 转换效率 

分 类 号：TM914.4[电气工程—电力电子与电力传动]