垂直结构酞菁铜薄膜晶体管的工作特性测试  

Operation Characteristics Measurements of Vertical Structure Copper Phthalocyanine Thin Film Transistor

作　　者：王东兴[1] 王泽英[1] 王玥玥[1] 张永霜 王玥[1] 

机构地区：[1]哈尔滨理工大学应用科学学院(教育部工程电介质重点实验室),黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2015年第4期16-20,共5页Journal of Harbin University of Science and Technology

基　　金：国家自然科学基金(61201075)

摘　　要：传统有机材料的场效应晶体管(FETs)具有工作速度低、驱动电压高的缺陷,针对这个问题,垂直结构的酞菁铜(Cu Pc)有机薄膜晶体管(VOTFTs)被制备,整个制备过程采用真空蒸镀和直流磁控溅射镀膜工艺.器件的层叠结构为Au/Cu Pc/Al(半导电)/Cu Pc/Au.其中半导电Al栅极薄膜的制备是十分重要的.VOTFT通过栅-源极偏压改变肖特基势垒高度来调制沟道电流.在室温下对其进行基本的电气测量.实验结果表明器件的静态输出特性具有不饱和性.漏-源极偏压VDS保持在2 V时,在栅-源极上施加频率为100 Hz的方波交流信号,得到器件的开关特性参数为ton=2.68 ms,toff=1.32 ms.在栅-源极上施加正弦波交流信号时,器件的截止频率和放大带宽分别为400 Hz,400 Hz.可知VOTFT具有工作频率高,响应速度快,电流密度大的优点.The field effect transistors （FETs） using the traditional organic material have the defects of low speed and high driving voltage. Aiming at this problem, we have fabricated the vertical structure organic thin film transistors （VOTFTs） based on copper phthalocyanine （CuPc） by vacuum evaporation and DC magnetron sputte- ring technology. The devive have a layered structure Au/CuPc/A1 （semi-conductive）/CuPc/Au. AI gate Schottky structure is very important for the preparation of VOTFFs with high performance. The operation mechanism of pre- pared VOTFT is to modulate channel current by gate-source bias voltage changing Schottky barrier height. The bas- ic electrical characteristics of transistors are measured at room temperature. The experimental results demonstrate that this device exhibits the non-saturating characteristics. When the drain-source bias voltage lids is maintained 2V and a small square wave alternating signal is applied on gate-source electrodes whose frequency f is 100 Hz, the cut-off frequency and amplification bandwidth of the device is 400 Hz and 400 Hz, respectively. VOTFT has a high operation frequency, fast response speed and large current density.

关 键 词：有机薄膜晶体管 半导电Al栅极 酞菁铜 肖特基势垒 

分 类 号：TN321.5[电子电信—物理电子学]