海洋环境下晶体管的现场贮存可靠性研究  

Research on the Field Storage Reliability of Transistors in the Marine Environment

作　　者：袁芳[1] 谢雪松[1] 张小玲[1] 王改丽 陈君[1] 哈悦 李嘉楠[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]海军701工厂,北京100015

出　　处：《半导体技术》2015年第10期783-788,共6页Semiconductor Technology

基　　金：十二五总装预研资助项目(51323060305)

摘　　要：介绍了我国海洋环境的特点及其对双极型晶体管特性的影响。基于典型近海仓库贮存环境,以具有代表性的、用量较大的中小功率晶体管为研究对象,具体分析了近海仓库贮存30~40年的双极型晶体管的性能退化情况和失效模式。研究经过了13个环节的筛选检测,统计并分析了晶体管失效情况,并以失效数目最多的筛选环节中失效的晶体管为例,进行了电学参数测试与开帽检查。研究结果表明,击穿电压、反向漏电流与电流增益是相对较敏感的失效参数。The characteristics of marine environment in China were described and its effects on bipolar transistors were introduced. Based on the typical offshore storage environment,the representative and widely-used medium and low power transistors were researched. The degradation and failure modes of transistors that were kept in offstore for 30- 40 years were analyzed concretely. After 13 steps screening test,the failure data of these transistors were recorded and analyzed. The transistors in highest failure rate screen step were decapped and exa-mined,and its electric characteristics were also measured.The experimental results show that,the breakdown voltage,reverse leakage current and current gain are relatively sensitive failure parameters.

关 键 词：海洋环境 贮存试验 晶体管 可靠性 失效参数 

分 类 号：TN306[电子电信—物理电子学]