三维阵列电极粒子像素辐射探测器的终端结构仿真研究  

The simulations research of termination structure for three dimensional particle pixel radiation detector

作　　者：胡海帆[1] 王颖[1] 陈杰[2] 

机构地区：[1]哈尔滨工程大学信息与通信工程学院,哈尔滨150001 [2]中国科学院微电子研究所,北京100029

出　　处：《中国科学：技术科学》2015年第9期991-998,共8页Scientia Sinica(Technologica)

基　　金：教育部科学技术研究重大项目(批准号:313017);高等学校博士学科点专项科研基金(批准号:20122304110016)资助项目

摘　　要：在新型绝缘衬底上硅互补金属氧化物半导体（SOI CMOS）粒子像素（ASCP）探测器结构基础上,提出背部沟槽终端结构.采用二维和三维器件仿真对比研究有源边界终端结构,结果表明：背部沟槽终端结构会在沟槽拐角处形成电场峰,同像素内N＋沟槽底端电场等效对称,改善衬底电场分布,提高像素探测器终端耐压.在等效中子辐射流通量0-10^16cm^-2内,背部沟槽终端和有源边界终端的边缘像素有相近的电荷收集特性.此外,还分析了ASCP探测器的粒子角度入射特性.In this paper, an improved termination structure is proposed to increase the breakdown voltage based on the advanced silicon-on- insulator complementary metal-oxide-semiconductor transistor （SOI CMOS） particle pixel （ASCP） detector. Two-dimensional （2D） and three-dimensional （3D） physical level simulations are presented. The results illustrate that the back trench termination is adopted in the presented termination structure, and the trench would produce an electric field peak, which is symmetrical with that of bottom N＋ trench. Compared with the conventional 3D pixel active-edge termination, the proposed termination has the better electric field diffusion, and the higher breakdown voltage. The proposed termination has the similar pixel charge collection efficiency with that of active-edge termination during the radiation situation from 0 to 10^16 cm ^-2. In addition, we have studied the particle angle characteristics for ASCP detector.

关 键 词：像素探测器 终端结构 沟槽 电荷收集 

分 类 号：O572.23[理学—粒子物理与原子核物理]