一种基于热噪声的真随机数发生器的设计与实现  

Design and Implementation of a True Random Number Generator Based on MOSFET Thermal Noise

作　　者：金杰[1] 罗敏[1,2] 宫月红[1,2] 

机构地区：[1]哈尔滨工业大学(威海)微电子中心,山东威海264209 [2]哈尔滨工业大学微电子中心,黑龙江哈尔滨150001

出　　处：《微电子学与计算机》2015年第10期7-11,16,共6页Microelectronics & Computer

摘　　要：提出了一种新颖的真随机数发生器(TRNG)结构。该真随机数发生器基于MOS管沟道热噪声对沟道电流的影响.针对工艺、电源电压扰动和温度变化等因素引入的误差,采用粗粒度和细粒度二级校正,并通过有限状态机实现系统的动态平衡.为了验证该结构的有效性,采用chatered-0.18μm-1.8V工艺,设计并实现了总功耗为1.3mW,面积为0.019 2mm2,输出速率可达125 Mb/s的真随机数发生器.产生的随机数序列通过NIST-SP 800-22测试.A novel true random number generator （TRNG） structure is proposed. This TRNG is on the basis of the influence of MOSFET thermal noise to channel current. In order to correct the errors introduced by process, supply voltage and temperature, this system uses coarse-grained and fine-grained tuning, and achieves dynamic balance through the finite state machine. In order to verify the effectiveness of the proposed structure, a TRNG is designed and implemented with chatered-0. 18μm-1. 8V process. Random bit throughput can reach up to 125 Mb/s with 1.3 mW total power consumption and 0. 019 2 mm2 core area. The generating random hit streams pass all NIST-SP 800-22 test.

关 键 词：真随机数发生器 热噪声 二级校正 有限状态机 动态平衡 

分 类 号：TN4[电子电信—微电子学与固体电子学]