机构地区:[1]安徽理工大学电气与信息工程学院,淮南232001 [2]南京大学电子科学与工程学院、微结构国家实验室,南京210093
出 处:《物理学报》2015年第18期432-438,共7页Acta Physica Sinica
基 金:国家自然科学基金(批准号:61274058,61025020,61322403);安徽省自然科学基金(批准号:1208085QF116);江苏省自然科学基金(批准号:BK2011437,BK20130013)资助的课题~~
摘 要:在纤锌矿结构Zn_(1-x)Mg_xO/ZnO异质结构中发现了高迁移率的二维电子气(2DEG),2DEG的产生很可能是由于界面上存在不连续极化,而且2DEG通常也被认为是由极化电荷产生的结果.为了探索2DEG的形成机理及其产生的根源,研究Zn_(1-x)MgxO合金的极化特性与ZnO/Zn_(1-x)Mg_xO超晶格的能带排列是非常必要的.基于第一性原理广义梯度近似+U方法研究了Zn_(1-x)Mg_xO合金的自发极化随Mg组分x的变化关系,其中极化特性的计算采用Berry-phase方法.由于ZnO与Zn_(1-x)Mg_xO面内晶格参数大小相当,ZnO与Zn_(1-x)Mg_xO的界面匹配度优良,所以ZnO/Zn_(1-x)Mg_xO超晶格模型较容易建立.计算了Mg_(0.25)Zn_(0.75)O/ZnO超晶格静电势的面内平均及其沿着Z(0001)方向上的宏观平均.(5+3)Mg_(0.25)Zn_(0.75)O/ZnO超晶格拥有较大的尺寸,确保远离界面的Mg_(0.25)Zn_(0.75)O与ZnO区域与块体计算情况一致.除此之外,基于宏观平均为能量参考,计算得到Mg_(0.25)Zn_(0.75)O/ZnO超晶格界面处价带偏差为0.26 eV,并且导带偏差与价带偏差的比值处于合理区间,这与近来实验上报道的结果相符.除了ZnO在[0001]方向上产生自发极化外,由于在ZnO中引入Mg杂质会产生应变应力,导致Mg_xZn_(1-x)O层产生额外的极化值.这样必然会在Mg_(0.25)Zn_(0.75)O/Zn界面处产生非连续极化现象,促使单极性电荷在界面处积累,从而在Mg_(0.25)Zn_(0.75)O/Zn超晶格中产生内在电场.此外,计算了Mg_(0.25)Zn_(0.75)O/ZnO超晶格的能带排列,由于价带偏差△Ev=0.26 eV与导带偏差△Ec=0.33 eV,表明能带遵循I型排列.Mg_(0.25)Zn_(0.75)O/ZnO的这种能带排列方式足以让电子与空穴在势阱中产生禁闭作用.2DEG在电子学与光电子学领域都有重要应用,本文的研究结果将对Mg_(0.25)Zn_(0.75)O/ZnO界面2DEG的设计与优化中起到重要作用,并且可以作为研究其他Mg组分的Mg_xZn_(1-x)O/ZnO超晶格界面电子气特性的参考依据.Two-dimensional(2D) electron gas with high-mobility is found in wurtzite ZnO/Zn(Mg)O heterostructure,which probably arises from the polarization discontinuity at the ZnO/Zn(Mg)O interface,and the 2D electron gas in the heterostructure is usually also regarded as resulting from polarization-induced charge.In order to explore both the formation mechanism and the origin of the 2D electron gas in ZnMgO/ZnO heterostructure,it is necessary to study the polarization properties of Zn(1-x)MgxO alloy and energy band alignment of ZnO/Zn(1-x)MgxO super-lattice.In this paper,we study the polarization properties of Zn(1-x)MgxO alloy with different Mg compositions by using first-principles calculations with GGA+U method,and the polarization properties are calculated according to Berryphase method.Owing to the excellent match between the in-plane lattice constants of ZnO and Zn(1-x)MgxO,the lattice constants of the ZnO and Zn(1-x)MgxO interface are similar,ZnO/Zn(1-x)MgxO super-lattice could be constructed easily.The planar-averaged electrostatic potential for the Mg(0.25)Zn(0.75)O/ZnO super-lattice and the macroscopically averaged potential along Z(0001) direction are calculated.The large size of(5+3) Mg(0.25)Zn(0.75)O/ZnO super-lattice ensures the convergence of potential to its bulk value in the region of the ZnO layer and Mg(0.25)Zn(0.75)O layer far from ZnO/Zn(1-x)MgxO interface.Besides,the valence band offset at the Mg(0.25)Zn(0.75)O/ ZnO interface is calculated to be0.26 eV based on the macroscopically averaged potential mentioned above,and the ratio of conduction band offset(△EC)to valence band offset(△EV) is in a reasonable range,and this is in substantial agreement with the values reported in recent experimental results.Because strain induces additional piezoelectric polarization in MgxZn(1-x)O,which is introduced by Mg dopant,the lack of inversion symmetry and the bulk ZnO induce its spontaneous polarization in the[0001
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