Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor  

作　　者：李睿 郭春生 冯士维 石磊 朱慧 王琳 

机构地区：[1]College of Electronic Information and Control Engineering,Beijing University of Technology

出　　处：《Chinese Physics B》2015年第7期384-386,共3页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61204081)

摘　　要：To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.

关 键 词：thermal contact resistance nondestructive measurement method structure function contact pressure 

分 类 号：O472[理学—半导体物理]