Energy distribution extraction of negative charges responsible for positive bias temperature instability  

作　　者：任尚清 杨红 王文武 唐波 唐兆云 王晓磊 徐昊 罗维春 赵超 闫江 陈大鹏 叶甜春 

机构地区：[1]Institute of Microelectronics of Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices and Integrated Technology

出　　处：《Chinese Physics B》2015年第7期448-452,共5页中国物理B（英文版）

基　　金：Project supported by the National Science&Technology Major Projects of the Ministry of Science and Technology of China(Grant No.2009ZX02035);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)

摘　　要：A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of n MOSFET during positive bias temperature instability（PBTI） stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy,and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of n MOSFET during positive bias temperature instability（PBTI） stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy,and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.

关 键 词：positive bias temperature instability high-k/metal gate electron trapping energy distribution 

分 类 号：O471[理学—半导体物理]