一种新型的抑制地线反弹噪声的Tri-Mode MTCMOS电路结构  

A Novel Tri-Mode MTCMOS Circuit Structure for Suppressing Ground Bouncing Noise

作　　者：杨文荣[1] 吴浩[1] 薛力升 朱赛飞[1] 

机构地区：[1]上海大学微电子研究与开发中心,上海200072

出　　处：《微电子学》2015年第5期657-660,665,共5页Microelectronics

摘　　要：提出了一种新型的MTCMOS电路结构。该结构在Tri-Mode MTCMOS电路基础上,结合叠加门控技术,进行电路结构改进,解决了Tri-Mode MTCMOS电路结构在高电压情况下抑制地线反弹噪声效果不明显的问题。电路采用SMIC 0.18μm CMOS工艺设计,使用HSPICE进行仿真。仿真结果表明,该结构与传统的MTCMOS电路相比,平均地线反弹减少约70%,比TriMode MTCMOS结构提高15%以上,特别在高电压情况下,平均提升40%。A new MTCMOS circuit structure was proposed. Based on Tri-Mode MTCMOS structure and stacking power gating technology, the problem was solved that the traditional Tri-Mode MTCMOS circuit structure made an ineffectual effort to suppress the ground bouncing noise under high voltage condition. The circuit was designed based on SMIC 0.18 μm CMOS technology. The HSPICE simulation results showed that the ground bounce of the new circuit structure was averagely reduced about 70% compared with the traditional MTCMOS circuit, which was over 15% than the traditional Tri-Mode MTCMOS circuit. Especially under high voltage condition, it was more than 40% averagely.

关 键 词：MTCMOS 地线反弹 叠加门控技术 三相多阈值电路 

分 类 号：TN47[电子电信—微电子学与固体电子学]