MTCMOS

作品数:4被引量:2H指数:1
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相关领域:电子电信更多>>
相关作者:吴浩朱赛飞杨文荣更多>>
相关机构:复旦大学东部高科股份有限公司上海大学更多>>
相关期刊:《Journal of Electronics(China)》《微电子学》《Journal of Semiconductors》《Frontiers of Optoelectronics》更多>>
相关基金:国家自然科学基金更多>>
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Novel design techniques for noise-tolerant power-gated CMOS circuits被引量:1
《Journal of Semiconductors》2017年第1期106-112,共7页Rumi Rastogi Sujata Pandey 
In this paper we have investigated the single phase sleep signal modulation technique,step-wise V_(gs)technique and the three-phase reactivation technique to evaluate the noise characteristics of multi-threshold CMO...
关键词:MTCMOS noise tolerant low power 
一种新型的抑制地线反弹噪声的Tri-Mode MTCMOS电路结构
《微电子学》2015年第5期657-660,665,共5页杨文荣 吴浩 薛力升 朱赛飞 
提出了一种新型的MTCMOS电路结构。该结构在Tri-Mode MTCMOS电路基础上,结合叠加门控技术,进行电路结构改进,解决了Tri-Mode MTCMOS电路结构在高电压情况下抑制地线反弹噪声效果不明显的问题。电路采用SMIC 0.18μm CMOS工艺设计,使用HS...
关键词:MTCMOS 地线反弹 叠加门控技术 三相多阈值电路 
Ground bounce noise reduction aware combinational multi threshold CMOS circuits for nanoscale CMOS multiplier
《Frontiers of Optoelectronics》2013年第3期327-337,共11页Bipin Kumar VERMA Shyam Babu SINGH Shyam AKASHE 
Multi-threshold complementary metal-oxide- semiconductor (MTCMOS) is ofbn used to reduce the leakage current in idle circuit. Ground bounce noise produced during a transition mode (sleep-to-active) is an important...
关键词:multi-threshold complementary metal-oxide-semiconductor (MTCMOS) mode transition groundbounce noise sleep transistor 
GROUND BOUNCING NOISE REDUCTION TECHNIQUE CONSIDERING WAKE-UP DELAY IN MTCMOS CIRCUITS被引量:1
《Journal of Electronics(China)》2011年第4期596-601,共6页Tian Xi Wang Yu Dong Zaiwang 
Supported by the National Natural Science Foundation of China (No. 6087001)
Multi-Threshold CMOS(MTCMOS) is an effective technique for controlling leakage power with low delay overhead.However the large magnitude of ground bouncing noise induced by the sleep to active mode transition may caus...
关键词:Ground bouncing noise Multi-Threshold CMOS(MTCMOS) Wake-up time Low leakage 
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