圆片级封装中硅帽的设计和加工  

Design and Fabrication of the Silicon Cap in the Wafer Level Packaging

作　　者：陈颖慧[1] 张慧[1] 施志贵[1] 屈明山[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微纳电子技术》2015年第10期649-653,670,共6页Micronanoelectronic Technology

基　　金：中国工程物理研究院超精密加工技术重点实验室课题资助项目(CJMZZ1202;CJMZZ1206)

摘　　要：为了提高微电子机械系统(MEMS)器件的成品率和集成度,介绍了一种应用于圆片级封装的硅帽结构。重点介绍了该硅帽结构的设计和加工方法。分析了圆片级封装(WLP)采用侧引线和通孔引线两种方式的优缺点。完成了上大下小的硅通孔结构和不同开口面积的通孔引线实验。采用电感耦合等离子(ICP)干法刻蚀获得了高深宽比、高陡直度的硅通孔。采用光学显微镜测试了上、下通孔的平面结构。在完成硅帽和敏感结构的键合后,进行了引线测试,结果表明这种上大下小的通孔结构能很好地完成引线工艺,其中250μm×250μm的尺寸是最佳开口面积。In order to improve the yield rate and integration level of the micro-electromechanical system（MEMS）devices,a silicon cap structure applied to the wafer level packaging（WLP）process was introduced.The design and fabrication method of the silicon cap structure were introduced emphatically.The advantages and disadvantages of the side wire-bonding and via-hole wire-bonding for the WLP were analyzed.The silicon via-hole structure with the large open area on top and small open area on bottom was designed,and the via-hole wire-bonding experiments of different open areas were finished.The silicon via-hole structure with the high aspect ratio and high steepness was obtained by the inductively coupled plasma（ICP）dry etching.The plane structures of the top via-hole and bottom via-hole were mearsured by the optical microscope.After bonding the silicon cap and sensitive structure,the wire-bonding test was carried out.The test results show that the silicon via-hole structure can finish the wire-bonding process effectively,and 250μm×250μm is the best open area.

关 键 词：微电子机械系统(MEMS) 圆片级封装(WLP) 电感耦合等离子体(ICP) 硅帽 引线 

分 类 号：TH703[机械工程—仪器科学与技术] TN305.96[机械工程—精密仪器及机械]