基于功率合成技术的75～115GHz六倍频源  

75 ～ 115GHz Power Combined Frequency Sextupler Sources

作　　者：姚常飞[1,2] 陈振华[3] 周明[2] 罗运生[2] 许从海[2] 郁建[2] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 [2]南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016 [3]南京信息工程大学电子与信息工程学院,江苏南京210044

出　　处：《电子学报》2015年第9期1864-1869,共6页Acta Electronica Sinica

摘　　要：本文采用混合集成技术，实现了75～115GHz的w波段六倍频功率合成信号源．其Ku波段输入信号经有源二倍频、功分及放大后，输出两路各约24dBm的Ka波段信号，以驱动75～115GHz三倍频器，变阻二极管基于南京电子器件研究所（NEDI）的GaAs工艺线设计实现，三倍频信号经功率合成后输出．考虑到倍频二极管各种寄生参数的影响，本文采用去嵌入阻抗计算方法，提取二极管的输入阻抗及三次谐波输出阻抗，综合分析匹配电路，优化倍频器效率．在75～115GHz测得六倍频源输出功率大于8．0dBm、输出功率平坦；在112GHz测得最大输出功率为10．2dBm，合成倍频效率大于1．3％，其性能达到了国外同类产品水平，可将微波信号源扩展至75～115GHz，解决了w波段TR组件本振源及发射源的产生问题．A 75 ～ 115GHz power combined frequency sextupler is developed with hybrid integrated technology. The frequen- cy of the input Ku-band signal is doubled by an active doubler, and then its output power is amplified to 24dBm. The power is ap- plied to pump 75～115GHz Iripler in which the varistor multiplying diode is realized by GaAs foundry of Nanjing electronic devices institute （NEDI）,and the aipler output power is combined. Considering parasitic parameters of the diodes, diode input and output optimum impedance is calculated with embedding analysis for matching circuit optimization. Measured results indicate the output power of the sextuplet is higher than 8.0dBm,and power response is fiat in 75 ～1l5GHz. The highest tested power is 10.2dBm at 110GHz, and combined multiplying efficiency is higher than 1.3 %. The sextupler performance achieves the level of similar foreign products, which can expand the existing microwave signals to 75 %115GHz and be applied for W-band TR modules.

关 键 词：W波段 砷化镓肖特基二极管 功率合成 倍频 效率 

分 类 号：TN771[电子电信—电路与系统]