CMOS射频功率放大器高效率和高线性度研究进展  

Survey of high efficiency and linearity of CMOS power amplifiers

作　　者：林俊明[1] 郑耀华[1] 张志浩[1] 章国豪 

机构地区：[1]广东工业大学信息工程学院,广东广州510006

出　　处：《电子技术应用》2015年第11期17-23,共7页Application of Electronic Technique

摘　　要：CMOS工艺价格低廉且兼容基带工艺,是单片集成电路的理想材料。根据现代无线通信系统所采用的调制方式对功率放大器的性能要求,重点介绍了功率放大器的效率和线性增强技术,比较了相应技术间的优点和缺点,最后阐述包络放大器的发展趋势及其在LTE(4G)的应用。CMOS process is the ideal solution for monolithic integrated circuit in terms of low cost and compatibility for baseband circuitries. Based upon the requirements applied for specific modulation scheme of modern communication systems, the purpose of this paper is to present the state of the art of the techniques of which the benefits and drawbacks are compared, to enhance the efficiency and linearity of power amplifiers（PAs）. In addition, the developing trend of enveloping tracking power amphfiers（ET PAs） applied for LTE applications is presented.

关 键 词：功率放大器 效率 线性度 LTE CMOS 包络跟综 

分 类 号：TN722.75[电子电信—电路与系统] TN323.4