工程用IGBT模块可靠性预计模型探讨  

Reliability Prediction Model of Engineering IGBT Module

作　　者：于迪[1] 史典阳[1] 任艳[1] 余昭杰[1] 

机构地区：[1]工业和信息化部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2015年第5期6-10,共5页Electronic Product Reliability and Environmental Testing

摘　　要：阐述了IGBT模块常见的失效模式、失效机理,并介绍了国外目前较为主流的可靠性预计模型,结合IGBT模块主要的失效模式和当前国产IGBT模块芯片外购、自主封装的生产现状,提出了表征较为全面的工程用国产IGBT模块的可靠性预计模型的方法,为当前国产IGBT模块的使用可靠性的评估提供了有效的支撑。Firstly, the common failure modes and failure mechanisms of IGBT module as well as several foreign mainstream reliability prediction modles are introduced. Then, combining with the main failure mode and the present production condition of domectic IGBT module that all the chips used in IGBT module are purchased from abroad and the package process is finished at home, a more comprehensive reliability prediction model aiming at the engineering-oriented IGBT module is proposed, which provides an useful support for the evaluation of the operational reliability of the domestic IGBT module.

关 键 词：绝缘栅双极晶体管 模块 可靠性预计 模型 

分 类 号：TN322.8[电子电信—物理电子学]