背面金属化工艺技术优化  

Optimization of Process in Back- side Metallization

作　　者：申猛[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2015年第5期12-13,17,共3页Microprocessors

摘　　要：背面金属化是连接前部芯片和后部装配的重要工艺,直接影响到后部装配成品率、热阻等等,因此对器件的可靠性有着重要影响。主要从背金前清洗及溅射背金两方面进行探索与研究,在背金前清洗工步增加背面腐蚀、背面漂酸工艺,溅射背金工步采用Ti Ni Au三层金属工艺。通过大量实验得出最优的工艺条件,并且通过后道封装剪切强度的测试及焊料流淌情况对比,验证了工艺优化的可行性,提高了背面金属化质量,对器件的可靠性提高有重要意义。The back - side metallization, directly influencing the yield, resistance and so on, is an important process between production of chip and package, so it is very significant for reliability of the devices. The back - side cleanout and metallization are researched in this paper. The processes of the back - side etch and the back - side cleanout are added in the step of cleanout,and the process of TI - NI - AU three layer metal is adopted in the step of back - side metallization. The optimized process condition is obtained by means of the experiments and the process optimum feasibility is proved after the contrast of the shear strength and solder condition to improve the qualitv of back -side metallization and the reliability of devices.

关 键 词：背面金属化 背面清洗 背面腐蚀 

分 类 号：TN4[电子电信—微电子学与固体电子学]