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出 处:《无机化学学报》2015年第11期2197-2204,共8页Chinese Journal of Inorganic Chemistry
基 金:中国科学院广州地球化学研究所有机地球化学国家重点实验室开放基金(OGL-201111)资助项目
摘 要:以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti1-xVxO2薄膜,研究了不同V靶功率对Ti1-xVxO2薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti1-xVxO2薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150 W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150 W时,Ti1-xVxO2薄膜的能带间隙值为2.82 e V,其在2 h的可见光照射下分解了80%的Rh B染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。Ti1-xVxO2 films with dominant {211} facets were deposited by direct current reactive magnetron sputtering with Ti and V targets (99.99% purity) at room temperature. We study the composition, crystal structure and visible- light photocatalytic properties of the films as a function of power of V target. The results showed that crystal phase of Ti1-xVxO2 films was anatase with (211) preferred orientation, but the films deposited at different power of V target had different crystallinities. With the increase of power of V target, the relative contents of V element increased gradually, meanwhile, crystal grain and deposition rate also increased. In addition, the surface roughness of the film had a maximum value when the power of V target was 150 W. The addition of V element gives rise to the band gap of TiO2 films narrowing down. As a result, the optical absorption edge of the Ti1-xVxO2 films shifts towards visible-light zone, improving the visible-light photocatalytic activity of the films. When the power of V target came to 150 W, the value of band gap of the Til_xVxO2 fihn was about 2.82 eV, and the film degraded -80% RhB dyes after 2 h visible- light irradiation. This can be attributed to the synergistic effect of narrow band gap, high energy facet {211}, and high crystallinity.
关 键 词:直流反应磁控溅射 Ti1-xVxO2薄膜 室温 高能晶面 可见光催化行为
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